Laboratorio de Nanoestructuras Semiconductoras

Departamento de Física - Unidad Zacatenco - CdMx

Bienvenidos

El Laboratorio de Nanoestructuras Semiconductoras (NanoSem) del Departamento de Física del Cinvestav cuenta con un grupo de profesores, estudiantes y auxiliares de investigación dedicados a la investigación de superficies, crecimiento de péliculas delgadas y heteroestructuras semiconductoras de baja dimensionalidad para aplicación en dispositivos optoeléctronicos, particularmente diódos luminiscentes, láseres semiconductores, fotodetectores, celdas solares, etc.

 

 

The Laboratory of Semiconductor Nanostructures (NanoSem) of the Department of Physics of Cinvestav has a group of professors, students and research assistants dedicated to the research of surfaces, the growth of  thin films and low-dimensional semiconductor heterostructures for application in optoelectronic devices, particularly luminescent diodes, semiconductor lasers, photodetectors, solar cells, etc.

 

La infraestructura del grupo comprende diversos arreglos experimentales para la caracterización óptica, electrónica, química, estructural y eléctrica de semiconductores II-VI y sus nanoestructuras. Estas son producidas en el laboratorio de epitaxia por medio de técnicas como epitaxia de haces moleculares (MBE, molecular beam epitaxy), epitaxia de capas atómicas (ALE, atomic layer epitaxy), epitaxia de haces pulsados de submonocapas (SPBE, submonolayer pulsed beam epitaxy).

 

 

The group's infrastructure includes various experimental arrangements for the optical, electronic, chemical, structural and electrical characterization of II-VI semiconductors and their nanostructures. These are produced in the epitaxy laboratory by means of techniques such as molecular beam epitaxy (MBE), atomic layer epitaxy (ALE), submonolayer pulsed beam epitaxy (SPBE).

 

Research interests:

  • Epitaxial growth (MBE, ALE, SPBE) of II-VI semiconductor thin films, heterostructures and nanostructures.
  • Optical properties (photoluminescence, ultra-fast spectroscopies, photoreflectance, Raman, photoconductivity, others).
  • Electrical properties (Hall effect, I-V, etc.).
  • Structural properties (electron diffraction, electron microscopy, HR-XRD, etc.).
  • Physics of surfaces and interfaces (ARUPS, XPS, AES, EELS)

Some recent research activities

  • Growth and characterization of fractional monolayer quantum dots (FMQDs) of CdSe/ZnSe.
  • Study of the excitonic properties of coupled and uncoupled double and triple quantum well systems.
  • Design, growth and characterization of quantum well heterostructures with non-conventional potential profiles.
  • Design, growth and characterization of type I quantum well heterostructures with type II active regions.
  • Study of Cd diffusion in ZnCdSe/ZnSe heterostructures induced by thermal treatmens.
  • Modelling of the temporal evolution of submonolayer epitaxial coverages.
  • Growth and characterization of photovoltaic ZnSe/GaAs heterovalent heterostructures with and without quantum well insertions.